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FK7SM-12
High-Speed Switching Use Nch Power MOS FET
REJ03G1378-0200 (Previous: MEJ02G0238-0101) Rev.2.00 Jul 07, 2006
Features
* * * * VDSS : 600 V rDS (ON) (max) : 1.63 ID : 7 A Integrated Fast Recovery Diode (MAX.) : 150 ns
Outline
RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P)
2, 4 4
1
1. 2. 3. 4.
Gate Drain Source Drain
1
2
3 3
Applications
Servo motor drive, Robot, UPS, Lamp ballast, etc.
Maximum Ratings
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg -- Ratings 600 30 7 21 7 21 125 - 55 to +150 - 55 to +150 4.8 Unit V V A A A A W C C g Conditions VGS = 0 V VDS = 0 V
Typical value
Rev.2.00
Jul 07, 2006
page 1 of 6
FK7SM-12
Electrical Characteristics
(Tch = 25C)
Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth(ch-c) trr Min. 600 30 -- -- 2 -- -- 3.3 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 1.25 3.75 5.5 1100 125 17 30 30 100 35 1.5 -- -- Max. -- -- 10 1 4 1.63 4.89 -- -- -- -- -- -- -- -- 2.0 1.00 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VGS = 25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 3 A, VGS = 10 V, RGEN = RGS = 50 IS = 3 A, VGS = 0 V Channel to case IS = 7 A, dis/dt = -100 A/s
Performance Curves
Power Dissipation Derating Curve
200
5 3 2
Maximum Safe Operating Area
Power Dissipation PD (W)
tw=10s 100s
Drain Current ID (A)
160
120
101 7 5 3 2 100 7 5 3 2
80
40
0
0
50
100
150
200
10-1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Tc = 25C Single Pulse
DC
Case Temperature Tc (C)
Drain-Source Voltage VDS (V)
Rev.2.00
Jul 07, 2006
page 2 of 6
FK7SM-12
Output Characteristics (Typical)
20
Output Characteristics (Typical)
10
Tc = 25C Pulse Test
Drain Current ID (A)
Drain Current ID (A)
16
VGS = 20V 10V 6V
Tc = 25C Pulse Test
8
VGS = 20V 10V 6V
12
6
PD = 125W
5V
8
5V
4
4
PD = 125W
4V
2 4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Drain-Source On-State Resistance rDS(ON) ()
Drain-Source On-State Voltage VDS(ON) (V)
On-State Voltage vs. Gate-Source Voltage (Typical)
40
On-State Resistance vs. Drain Current (Typical)
5.0
Tc = 25C Pulse Test
32 ID = 14A
Tc = 25C Pulse Test
4.0
24
3.0
VGS = 10V 20V
16 7A 8 3A
2.0
1.0 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
0
0
4
8
12
16
20
Gate-Source Voltage VGS (V)
Drain Current ID (A) Forward Transfer Admittance vs. Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
101 7 5 3 2 100 7 5 3 2 10-1 -1 10 23 5 7 100 23 5 7 101
Transfer Characteristics (Typical)
20
Drain Current ID (A)
16
Tc = 25C VDS = 50V Pulse Test
VDS = 10V Pulse Test
Tc = 25C
12
75C 125C
8
4
0
0
4
8
12
16
20
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00
Jul 07, 2006
page 3 of 6
FK7SM-12
Capacitance vs. Drain-Source Voltage (Typical)
2 103 7 5 3 2 102 7 5 3 2
Coss
Switching Characteristics (Typical)
103 7 5
Ciss
Capacitance C (pF)
Switching Time (ns)
3 2 102 7 5 3 2 101 10-1 23
Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50
td(off)
tf tr td(on)
Tch = 25C 101 f = 1MHz 7 VGS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
Crss
5 7 100
23
5 7 101
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs. Gate Charge (Typical)
20
40
Source-Drain Diode Forward Characteristics (Typical)
VGS = 0V Pulse Test
Gate-Source Voltage VGS (V)
Tch = 25C ID = 7 A
16
VDS = 100V
200V
Source Current IS (A)
32
12
400V
24
Tc = 125C
8
16
75C
8
4
25C
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
Gate Charge Qg (nC) On-State Resistance vs. Channel Temperature (Typical)
101 7 5 3 2 100 7 5 3 2 10-1 0 50 100 150 200 250
Source-Drain Voltage VSD (V) Threshold Voltage vs. Channel Temperature (Typical)
5.0
Drain-Source On-State Resistance rDS(ON) (25C)
Drain-Source On-State Resistance rDS(ON) (tC)
Gate-Source Threshold Voltage VGS(th) (V)
VGS = 10V ID = 3A Pulse Test
VDS = 10V ID = 1mA
4.0
3.0
2.0
1.0
0
-50
0
50
100
150
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Rev.2.00
Jul 07, 2006
page 4 of 6
FK7SM-12
Breakdown Voltage vs. Channel Temperature (Typical)
1.4
Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C)
Diode Reverse vs. Source Currnet Characteristic (Typical)
Reverce Recovery Current Irr (ns) Reverce Recovery Time trr (ns)
103 7 5 3 2 102 trr 7 5 3 2 101 0 10 Irr 102 dis/dt = -100A/s 7 VGS = 0V 5 VDD = 250V 3 2 101 7 5 3 2
VGS = 0V ID = 1mA
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
23
5 7 101
Tch = 25C Tch = 150C 100 23 5 7 102
Channel Temperature Tch (C)
Source Current IS (A)
Transient Thermal Impedance Zth(ch-c) (C/W)
Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical)
Reverce Recovery Current Irr (ns)
5
Transient Thermal Impedance Characteristics
101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 0.05 0.02 0.01 D=1 0.5 0.2 0.1 PDM
tw T D= tw T
Reverce Recovery Time trr (ns)
3 2 trr 102 7 5 3 2 101 7 5 101
5 IS = 7A VGS = 0V 3 VDD = 250V 2 101 7 5 3 2 100 Tch = 25C Tch = 150C 7 5 23 5 7 103
Irr
23
57
102
Single Pulse 10-2 -42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 10
Source Current dis/dt (-A/s)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor
Switching Waveform
90%
RGEN
10% 10% 10%
90% td(on) tr
90% td(off) tf
Rev.2.00
Jul 07, 2006
page 5 of 6
FK7SM-12
Package Dimensions
Package Name TO-3P*
JEITA Package Code SC-65
RENESAS Code PRSS0004ZB-A
Previous Code
MASS[Typ.] 4.8g
Unit: mm
15.9Max
4.5 1.5
5.0 3.2 2
2
4
20.0
4.4
1.0
19.5Min
0.6 5.45 5.45
2.8
4
Ordering Information
Lead form Straight type Standard packing Static electricity prevention bag Quantity 200 Standard order code Type name Standard order code example FK7SM-12
Note: Please confirm the specification about the shipping in detail.
Rev.2.00
Jul 07, 2006
page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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